STD790A medium current, high performance, low voltage pnp transistor n very low collector to emitter saturation voltage n dc current gain, h fe > 100 n 3 a continuous collector current n 60 v breakdown voltage (v (br)cer ) n surface mounting dpak (to-252) power package in tape & reel (suffix "t4") applications n switching regulator in battery charger applications n suitable for automotive applications (v (br)cer > 60v) n voltage regulation in bias supply circuits n heavy load driver description the device is manufactured in low voltage pnp planar technology by using a "base island" layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. internal schematic diagram march 2003 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) -60 v v cer collector-emitter voltage (r be = 47 w ) -60 v v ebo emitter-base voltage (i c = 0) -5 v i c collector current -3 a i cm collector peak current (t p < 5 ms) -6 a p tot total dissipation at t c = 25 o c15w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c type marking STD790A d790a ? 1 3 dpak ( to-252) (suffix "t4") 1/6
thermal data r thj-case thermal resistance junction-case max 8.33 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = -30 v v cb = -30 v t j = 100 o c -0.1 -10 m a m a i ebo emitter cut-off current (i c = 0) v eb = -4 v -1 m a v (br)cer * collector-emitter breakdown voltage (r be = 47 w ) i c = -10 ma -60 v v (br)cbo collector-base breakdown voltage (i e = 0) i c = -100 m a -60 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = -100 m a -5 v v ce(sat) * collector-emitter saturation voltage i c = -0.5a i b = -5ma i c = -1a i b = -10ma i c = -2a i b = -20ma i c = -3a i b = -30ma i c = -3a i b = -30ma t j = 100 o c -0.15 -0.3 -0.5 -0.7 -0.9 v v v v v v be(sat) * base-emitter saturation voltage i c = -1 a i b = -10 ma -0.8 -1.0 v v be(on) base-emitter turn-on voltage i c = -1 a v ce = -2 v -0.8 -1 v h fe * dc current gain i c = -10 ma v ce = -2 v i c = -500 ma v ce = -2 v i c = -1 a v ce = -2 v i c = -2 a v ce = -1 v i c = -3 a v ce = -1v 100 100 100 100 90 200 200 160 130 300 300 f t transition frequency i c = -50 ma v ce = -5v f = 50mhz 100 mhz t d t r t s t f resistive load delay time risetime storagetime fall time i c = -3 a i b1 = - i b2 = -60 ma v cc = -20 v (see figure 1) 180 160 250 80 220 210 300 100 ns ns ns ns * pulsed: pulse duration = 300 m s, duty cycle 1.5 % STD790A 2/6
switching times resistive load switching times resistive load collector-emitter saturation voltage base-emitter saturation voltage dc current gain dc current gain STD790A 3/6
figure 1: resistive load switching test circuit. 1) fast electronic switch 2) non-inductive resistor STD790A 4/6
dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data STD790A 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2003 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com STD790A 6/6
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